unisonic technologies co., ltd ut4466 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-863.a 10a, 30v n-channel enhancement mode mosfet ? description the utc ut4466 is an n-channel power fet, it uses utc?s advanced technology to provide customers a minimum on-state resistance, high switching speed and low gate charge. ? features * r ds(on) =15m ? @v gs =10v,i d =10a * high switching speed * low gate charge (typ.=10.5nc) sop-8 ? ordering information ordering number package packing lead free halogen free ut4466l-s08-r UT4466G-S08-R sop-8 tape reel ut4466l-s08-t ut4466g-s08-t sop-8 tube
ut4466 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-863.a ? pin configuration
ut4466 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-863.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 25 v drain current continuous(note 2) t a =25c i d 10 a t a =85c 6 a pulsed (note 3) i dm 60 a avalanche current (note 3, 4) i ar 16 a repetitive avalanche energy (note 3, 4 ) l=0.1mh e ar 12.8 mj power dissipation (note 2) p d 1.42 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. device mounted on fr-4 substrate pc board with minimum recommended pad layout in a still air environment @ t a =25c. the value in any given application depends on the user's specific board design. 3. repetitive rating, pulse width limited by junction temperature. 4. i ar and e ar rating are based on low frequency and duty cycles to keep t j =25c ? thermal characteristics (t a =25c, unless otherwise specified) parameter symbol ratings unit junction to ambient (note 1) ja 88.4 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics (note 1) drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+25v, v ds =0v +100 na reverse v gs =-25v, v ds =0v -100 na on characteristics (note 1) gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1.0 1.45 2.4 v static drain-source on-state resistance r ds(on) v gs =10v, i d =10a 15 23 m ? v gs =4.5v, i d =7.5a 25 33 m ? forward transfer admittance |y fs | v ds =5v, i d =10a 2.5 s dynamic parameters (note 2) input capacitance c iss v gs =0v, v ds =15v, f=1.0mhz 478.9 pf output capacitance c oss 96.7 pf reverse transfer capacitance c rss 61.4 pf switching parameters gate resistance r g v ds =0v, v gs =0v, f=1mhz 0.4 1.1 1.6 ? total gate charge q g v gs =4.5v, v ds =15v, i d =10a 5.0 8 nc total gate charge q g v gs =10v, v ds =15v, i d =10a 10.5 17 nc gate to source charge q gs 1.8 nc gate to drain charge q gd 1.6 nc turn-on delay time t d ( on ) v ds =15v, v gs =10v, r g =3 ? , r l =1.5 ? 2.9 ns rise time t r 7.9 ns turn-off delay time t d ( off ) 14.6 ns fall-time t f 3.1 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1a, v gs =0v 0.69 1 v notes: 1. short duration pulse test used to minimize self-heating effect. 2. guaranteed by design. not subject to production testing.
ut4466 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-863.a ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
ut4466 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-863.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
ut4466 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-863.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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